Yoshiji HORIKOSHI

TEL : 03-5286-3176　 FAX : 03-3209-3450
e-mail : horikosi@waseda.jp
URL:http://www.horikosi.elec.waseda.ac.jp/

　B.S.（1966, Tohoku Univ.）, Dr. Eng.（1971, Tohoku Univ.）Research Scientist（1971～1996, NTT Basic Res. Labs.）, Professer（1996～present, Waseda Univ.）, Guest Researcher（1983～84, Max-Planck-Institut）, Guest Researcher（1993, Imperial College）, Guest Professor（1995～97, Tohoku Univ., 1997～98, Hokkaido Univ.）, Lecturer（1997, Univ. of Tokyo）

Research

The main purpose of our laboratory is to investigate the behavior of electrons and holes in semiconductors modulated by artificial boundary conditions. Modulation of semiconductors includes one-dimensional（quantumwires）and zero-dimensional（quantum boxes）structures for both electronic and optical applications. For these purposes, well-controlled semiconductor structures with extremely high purity is needed. Therefore, epitaxial growth and processing technology for nano-structure fabrication are very important in our research. We have developed new epitaxial growth techniques such as Migration-Enhanced Epitaxy（MEE）and Flow rate Modulation Epitaxy（FME）which are useful to grow the structures with one atomic layer accuracy and with high purity. Investigation on the surface atomic processes during growth and nano-sturcure processing will be also useful to improve the structural accuracy. To fabricate well-defined low-dimensional structures, we apply area selective epitaxy and reactive ion etching for the lateral definition. 　

Representative publications

"Migration-enhanced Epitaxy" in Handbook of Crystal Growth 3, pp.693-741, Elsevier, Ed. D. T. J. Hurle, 1994.
"Formation of a two-dimensional electron gas in an inverted undoped hetero-structure with a shallow channel depth" J. Appl. Phys. vol.87（No.2）, pp.952-954（2000）.
"Free GaAs surfaces studied using a back-gated undoped GaAs/AIGaAs heterostructures" Phys. Rev. B vol.63, pp.245309-1-245309-8（2001）